| PART |
Description |
Maker |
| MW5IC2030 |
GSM/GSM EDGE, W–CDMA, PHS 1930–1990 MHz, 30 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
|
Motorola
|
| Q68000-A9124 CGY94 |
GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| RF5110G RF5110GPCBA-410 |
3V GSM POWER AMPLIFIER
|
RF Micro Devices
|
| RF5110 RF5110PCBA |
3V GSM POWER AMPLIFIER
|
RF Micro Devices
|
| CGY93P |
GSM 2 stage Power Amplifier MMIC
|
Infineon
|
| CGY2014 CGY2014ATW |
GSM/DCS/PCS power amplifier
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| MRF5S9080NBR1 |
GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
|
Freescale Semiconductor
|
| MRFIC0970 |
3.2V GSM GaAs Intergrated Power Amplifier 3.2V的集成的GSM砷化镓功率放大器
|
飞思卡尔半导体(中国)有限公司
Freescale Semiconductor, Inc
|
| MRFIC1859 |
Dual Band / GSM 3.6V Integrated Power Amplifier
|
Motorola
|
| AWT6155 AWT6155RM37P8 AWT6155RM37P9 |
Quad-band GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| SKY77354-13 |
Power Amplifier Module for Quad-Band GSM / GPRS / EDGE
|
Skyworks Solutions Inc.
|
| PF01411 PF01411A |
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
